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Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber

  • Solid State and Liquid Lasers
  • Published:
Laser Physics

Abstract

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-μm-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.

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Authors and Affiliations

  1. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, 130033, China

    J. Y. Peng, H. M. Tan, B. S. Wang, J. G. Miao & L. S. Qian

  2. Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China

    Y. G. Wang & X. Y. Ma

  3. Graduated School of Chinese Academy of Science, Beijing, 100039, China

    J. Y. Peng, B. S. Wang & J. G. Miao

Authors
  1. J. Y. Peng
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  2. H. M. Tan
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  3. Y. G. Wang
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  4. B. S. Wang
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  5. J. G. Miao
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  6. L. S. Qian
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  7. X. Y. Ma
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Original Text © Astro, Ltd., 2006.

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Peng, J.Y., Tan, H.M., Wang, Y.G. et al. Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber. Laser Phys. 16, 1601–1604 (2006). https://doi.org/10.1134/S1054660X06120012

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  • DOI: https://doi.org/10.1134/S1054660X06120012

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