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Tunable-Frequency Lasing on Thin Semiconductor Quantum Rings

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Abstract—

It is been established that thin semiconductor quantum rings in an external magnetic field have unique selection properties: by choosing the type of heterostructure and the geometry of the ring, it is possible to reduce its the energy spectrum to a single one-electron state with a predetermined binding energy and orbital and spin moments. In an external magnetic field, this binding energy can be discretely changed by varying the field value. The idea of creating an economical discretely tunable frequency laser based on thin semiconductor quantum rings as active elements is discussed.

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Notes

  1. For calculation of the correction for the effective mass and the electron g-factor in the context of the modified Kane theory, see [13].

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Funding

This study was supported by the Russian Foundation for Basic Research (project no. 20-07-01044 А) and the Ministry of Science and Higher Education of the Russian Federation (grant no. 0707-2020-0025).

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Authors and Affiliations

  1. Moscow State University of Technology STANKIN, 127055, Moscow, Russia

    A. M. Mandel, V. B. Oshurko & E. E. Karpova

  2. Prokhorov Institute of General Physics, Russian Academy of Sciences, 119991, Moscow, Russia

    V. B. Oshurko, S. M. Pershin & D. G. Artemova

Authors
  1. A. M. Mandel
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  2. V. B. Oshurko
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  3. S. M. Pershin
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  4. E. E. Karpova
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  5. D. G. Artemova
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Corresponding authors

Correspondence to A. M. Mandel, V. B. Oshurko, S. M. Pershin, E. E. Karpova or D. G. Artemova.

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Translated by Z. Smirnova

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Mandel, A.M., Oshurko, V.B., Pershin, S.M. et al. Tunable-Frequency Lasing on Thin Semiconductor Quantum Rings. Dokl. Phys. 66, 160–163 (2021). https://doi.org/10.1134/S1028335821060070

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