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Investigation of the Effect of Irradiation by a Low-Energy Electron Beam on the Capacitance–Voltage Characteristics of SiO2

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Abstract

The effect of electron-beam irradiation on the properties of metal-insulator-semiconductor Al/SiO2/n-Si structures is investigated by the method of measurement of the capacitance–voltage (C–V) characteristics. It is found that charging phenomena and the formation of new centers at the SiO2-Si interface in structures based on n-Si become visible at substantially higher irradiation doses than in the case of p-Si. A decrease in the effective donor concentration as a result of irradiation is revealed. This can be explained by the passivation of phosphor with hydrogen. Annealing for 10 minutes at a temperature of 100°C results in recovery of the effective donor concentration, and after annealing at 250°C, complete reconstruction of the C–V curves to the initial state is observed.

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Funding

The work is supported under the State task no. 075-00355-21-00.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow Region, Russia

    Yu. O. Kulanchikov, P. S. Vergeles & E. B. Yakimov

  2. National University of Science and Technology “MISIS”, 119049, Moscow, Russia

    Yu. O. Kulanchikov

Authors
  1. Yu. O. Kulanchikov
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  2. P. S. Vergeles
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  3. E. B. Yakimov
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Corresponding author

Correspondence to Yu. O. Kulanchikov.

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Translated by G. Levina

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Kulanchikov, Y.O., Vergeles, P.S. & Yakimov, E.B. Investigation of the Effect of Irradiation by a Low-Energy Electron Beam on the Capacitance–Voltage Characteristics of SiO2. J. Surf. Investig. 15, 1045–1048 (2021). https://doi.org/10.1134/S1027451021050323

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