Nanolayers of Tantalum- and Aluminum Oxides and Dielectric Compositions Based on Them

Abstract

The generalized results of studying the formation of nanolayers of tantalum- and aluminum oxides, as well as their multilayer compositions obtained by molecular layering on a silicon (100) surface, are presented. It is established that the formation of oxide layers by the alternating chemisorption of metal halide and water vapors can occur via three mechanisms: a reaction between the components in the polymolecular adsorbed layer with the formation of hydrated oxides, the sequential buildup of monomolecular layers (layered growth mechanism), and the formation and subsequent development of two-dimensional islet structures. The conditions for the implementation of these growth mechanisms, as well as for the implementation of multilayer compositions with alternating zones of these oxides, are determined. An exchange activator triethylamine is used to stabilize the process of formation of the oxide layer and to extend the temperature range of layer growth. The dielectric characteristics of the synthesized nanostructures are evaluated, as well as the influence of heat treatment on these characteristics.