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Investigation of the Effect of Electron-Beam Irradiation on the Defect Structure of Laterally Overgrown GaN Films via the Induced-Current and Cathodoluminescence Methods

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Abstract

The low-energy electron irradiation effect on the defect structure on epitaxial laterally overgrown (ELOG) films and thick GaN crystals grown via the hydride epitaxy method is studied using a scanning electron microscope by the induced-current and cathodoluminescence methods. Electron-beam irradiation is carried out at room temperature. In this case, the electron-beam irradiation effect on dislocation segments located in the basal plane is studied in ELOG GaN films. At the same time, dislocations are introduced into GaN crystals by indentation at room temperature. It is found that the behavior of growth dislocations and those introduced by indentation is different under electron-beam irradiation.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    P. S. Vergeles & E. B. Yakimov

  2. National University of Science and Technology MISIS, Moscow, 119049, Russia

    E. B. Yakimov

Authors
  1. P. S. Vergeles
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  2. E. B. Yakimov
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Correspondence to P. S. Vergeles.

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Original Russian Text © P.S. Vergeles, E.B. Yakimov, 2018, published in Poverkhnost’, 2018, No. 10, pp. 59–65.

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Vergeles, P.S., Yakimov, E.B. Investigation of the Effect of Electron-Beam Irradiation on the Defect Structure of Laterally Overgrown GaN Films via the Induced-Current and Cathodoluminescence Methods. J. Surf. Investig. 12, 994–999 (2018). https://doi.org/10.1134/S1027451018050348

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  • DOI: https://doi.org/10.1134/S1027451018050348

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