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Backscattered electron imaging of micro- and nanostructures: 2. Rectangular structures

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Abstract

The results of an investigation into the imaging of rectangular grooves in silicon, which are obtained using a scanning electron microscope operating in the backscattered electron recording mode, are presented. Three imaging mechanisms are revealed, and their contributions are separated experimentally. One of the mechanisms is caused by primary electrons of the probe, and the other two are related to the multiple scattering of primary and secondary (ionized) electrons.

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Authors and Affiliations

  1. A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    Yu. A. Novikov

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  1. Yu. A. Novikov
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Original Russian Text © Yu.A. Novikov, 2015, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2015, No. 5, pp. 78–89.

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Novikov, Y.A. Backscattered electron imaging of micro- and nanostructures: 2. Rectangular structures. J. Surf. Investig. 9, 496–507 (2015). https://doi.org/10.1134/S102745101503009X

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  • DOI: https://doi.org/10.1134/S102745101503009X

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