Abstract
Apparatus and technological protocols developed at the Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences (BINP SB RAS), for the method of the deep X-ray lithography of high-aspect-ratio microstructures with an arbitrarily specified topological pattern are presented. The novelty of the approach described is the use of the direct formation of deep LIGA structures in a SU-8 negative photoresist with a diaphragmed SR (synchrotron radiation) microbeam with the possibility of changing the diaphragm during exposure.
Similar content being viewed by others
References
LIGA and Its Applications, Ed. by V. Saile et al. (Wiley-VCH, Weinheim, 2009).
B. G. Goldenberg, E. F. Reznikova, A. G. Lemzyakov, and V. F. Pindyurin, Optoelectron., Instrument. Data Process. 49, 81 (2013).
B. G. Goldenberg, T. N. Goryachkovskaya, V. S. Eliseev, N. A. Kolchanov, V. I. Kondrat’ev, G. N. Kulipanov, V. M. Popik, S. E. Pel’tek, E. V. Petrova, and V. F. Pindyurin, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 2, 637 (2008).
R. L. Barber, M. K. Ghantasala, R. Divan, et al., Microsyst. Technol. Micro Nanosyst. Inform. Storage Process. Syst. 11, 303 (2005).
E. F. Reznikova, J. Mohr, and H. Hein, Microsyst. Technol. Micro Nanosyst. Inform. Storage Process. Syst. 11, 282 (2005).
F. Pfeiffer, T. Weitkamp, O. Bunk, and C. David, Nature Phys. 2, 258 (2006).
M. Bech, T. H. Jensen, O. Bunk, T. Donath, C. David, T. Weitkamp, G. le Duc, A. Bravin, P. Cloetens, and F. Pfeiffer, Z. Med. Phys. 20, 7 (2010).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © B.G. Goldenberg, A.G. Lemzyakov, A.G. Zelinsky, V.F. Pindyurin, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 12, pp. 11–15.
Rights and permissions
About this article
Cite this article
Goldenberg, B.G., Lemzyakov, A.G., Zelinsky, A.G. et al. On the direct X-ray lithographic formation of deep microstructures. J. Surf. Investig. 8, 1201–1204 (2014). https://doi.org/10.1134/S1027451014060275
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1027451014060275