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Deep 3D X-ray Lithography Based on High-Contrast Resist Layers

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Abstract

In classical X-ray lithography, the mask and resist layer are arranged perpendicular to the incident X-ray beam. Being absorbed in the resist layer, the X-ray beam induces a response in the form corresponding to its cross section. However, using a tilt and rotation of the mask/resist and sequential repeated exposures, it is possible to create three-dimensional forms that are accurate to within less than a micron. New approaches to the creation of 3D microstructures by deep X-ray lithography are described, which can ensure the formation of relatively large arrays.

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ACKNOWLEDGMENTS

Investigations related to the irradiation of samples were performed using infrastructure of the Shared-Use Center “Siberian Synchrotron and Terahertz Radiation Center (SSTRC)” based on the VEPP-3 storage ring at the Budker Institute of Nuclear Physics (Novosibirsk).

Funding

This work was supported in part by the Russian Foundation for Basic Research and the Government of Novosibirsk Region, project. no. 19-42-540014.

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Authors and Affiliations

  1. Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. P. Naz’mov

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  1. V. P. Naz’mov
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Correspondence to V. P. Naz’mov.

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Translated by P. Pozdeev

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Naz’mov, V.P. Deep 3D X-ray Lithography Based on High-Contrast Resist Layers. Tech. Phys. Lett. 45, 906–908 (2019). https://doi.org/10.1134/S1063785019090256

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  • DOI: https://doi.org/10.1134/S1063785019090256

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