Abstract
The temperature dependence of the diffusion coefficient of sodium implanted in n-Si samples grown by the Czochralski method in a magnetic field (ρ < 1 kΩ cm; oxygen concentration N O = 3.7 × 1017 cm−3) is studied for the first time in the annealing-temperature range T ann = 500–800°C. At T ann > 700°C, this dependence is characterized by diffusion parameters, which describe sodium diffusion in “pure” float-zone p-Si (E fz = 1.29 eV and D O = 1.8 × 10−2 cm2/s). At T ann < 700°C, the effective activation energy of sodium diffusion increases with a decrease in T ann, which is due to interaction between sodium and oxygen atoms with the formation (presumably) of a Na-O complex. Estimates of the binding energy of this complex yield a value of 0.82 eV.
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Original Russian Text © A.V. Zastavnoi, V.M. Korol’, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 11, pp. 93–95.
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Zastavnoi, A.V., Korol’, V.M. On the diffusion of implanted sodium in n-Si. J. Surf. Investig. 8, 1174–1176 (2014). https://doi.org/10.1134/S1027451014060184
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DOI: https://doi.org/10.1134/S1027451014060184