Skip to main content
SpringerLink
Log in

Computer simulation of the two-stage ion polishing of a silicon surface

  • Published:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques Aims and scope Submit manuscript

Abstract

Comparative results of the computer simulation of surface sputtering by a focused ion beam with Gaussian density distribution and a uniform ion flux are presented. The experimental angular dependences of the yield of silicon sputtering by nitrogen and argon ions are used. The possibility of the optimization of ion polishing via methods of computer simulation is demonstrated.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P. Sigmund, Phys. Rev. 184, 383 (1969).

    Article  Google Scholar 

  2. M. P. Seah, C. A. Clifford, M. F. Green, and I. S. Gilmore, Surf. Interface Anal. 37, 444 (2005).

    Article  Google Scholar 

  3. R. Behrisch and W. Eckstein, Sputtering by Particle Bombardment. IV (Springer, Berlin, Heidelberg, 2007).

    Google Scholar 

  4. Y. Yamamura, Radiat. Eff. Defects Solids 80, 137 (1984).

    Google Scholar 

  5. www.srim.org

  6. W. Möller and W. Eckstein, Nucl. Instrum. Methods Phys. Res. B 2, 814 (1984).

    Article  Google Scholar 

  7. M. A. Karolewski, Nucl. Instrum. Methods Phys. Res. B 230, 402 (2005).

    Article  Google Scholar 

  8. R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988).

    Article  Google Scholar 

  9. M. Kardar, G. Parisi, and Y. C. Zhang, Phys. Rev. Lett. 56, 889 (1986).

    Article  Google Scholar 

  10. J. P. Ducommun, M. Cantagrel, and M. Moulin, J. Mater. Sci. 10, 52 (1975).

    Article  Google Scholar 

  11. G. Carter, J. Phys. D: Appl. Phys. 34, 201 (2001).

    Article  Google Scholar 

  12. S. E. Birkgan, V. I. Bachurin, A. S. Rudy, and V. K. Smirnov, Radiat. Eff. Defects Solids 159, 163 (2004).

    Article  Google Scholar 

  13. H.-B. Kim, G. Hobler, and A. Steiger, Nanotecnology 18, 245303 (2007).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Yaroslavl State University, Yaroslavl, 150000, Russia

    S. E. Birkgan

  2. Yaroslavl Branch, Moscow State University of Railway Engineering MIIT, Yaroslavl, 150030, Russia

    V. I. Bachurin

Authors
  1. S. E. Birkgan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. I. Bachurin
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. I. Bachurin.

Additional information

Original Russian Text © S.E. Birkgan, V.I. Bachurin, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 6, pp. 18–24.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Birkgan, S.E., Bachurin, V.I. Computer simulation of the two-stage ion polishing of a silicon surface. J. Surf. Investig. 8, 524–529 (2014). https://doi.org/10.1134/S1027451014030252

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1027451014030252

Keywords

Search

Navigation