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Morphology simulation of the surface subjected to low-energy ion sputtering

  • Electron and Ion Beams, Accelerators
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Abstract

A new 2D method of simulating the morphology of a surface subjected to low-energy ion sputtering with regard to sputtered material redeposition is suggested. The object of simulation is the profile of microgrooves arising on the silicon surface exposed to slow argon ions from the dense plasma of an rf induction discharge. Numerical simulation data and experimental data are in good agreement.

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Authors and Affiliations

  1. Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Universitetskaya ul. 21, Yaroslavl, 150007, Russia

    A. S. Shumilov & I. I. Amirov

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  1. A. S. Shumilov
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  2. I. I. Amirov
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Correspondence to A. S. Shumilov.

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Original Russian Text © A.S. Shumilov, I.I. Amirov, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 7, pp. 112–118.

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Shumilov, A.S., Amirov, I.I. Morphology simulation of the surface subjected to low-energy ion sputtering. Tech. Phys. 60, 1056–1062 (2015). https://doi.org/10.1134/S1063784215070245

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