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Temperature dependence of the cathodoluminescence spectra of irradiated light-emitting-diode structures with multiple InGaN/GaN quantum wells

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Abstract

The cathodoluminescence spectra of regions of light-emitting structures with multiple InGaN/GaN quantum wells unirradiated and irradiated with an electron beam are investigated in the temperature range from liquid-nitrogen temperature to room temperature. It is shown that a new emission line with an energy of 2.69 eV emerges as a result of irradiation in addition to the initial 2.6 eV line. The intensity of the emission line associated with Mg in p-GaN also increases after irradiation.

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Authors and Affiliations

  1. Institute of Microelectronic Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia

    P. S. Vergeles & E. B. Yakimov

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  1. P. S. Vergeles
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  2. E. B. Yakimov
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Correspondence to P. S. Vergeles.

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Original Russian Text © P.S. Vergeles, E.B. Yakimov, 2013, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2013, No. 9, pp. 38–41.

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Vergeles, P.S., Yakimov, E.B. Temperature dependence of the cathodoluminescence spectra of irradiated light-emitting-diode structures with multiple InGaN/GaN quantum wells. J. Surf. Investig. 7, 844–847 (2013). https://doi.org/10.1134/S1027451013050200

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  • DOI: https://doi.org/10.1134/S1027451013050200

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