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Computer simulation of the theoretical contrast of various types of structure defects with noise factors

  • Proceedings of XXII Russian Conference on Electron Microscopy (Scintific Council of RAS on Electron Microscopy, Institute of Microelectronics Technology and High Purity Materials of RAS, Shubnikov Institute of Crystallography RAS, Chernogolovka, June 2008,
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Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques Aims and scope Submit manuscript

Abstract

We present computer simulation results for the images of various types of structural defects in 6H-SiC and Si single crystals with taking into account noise factors (background heterogeneity and contrast graininess). If we know the parameters used to simulate the image, we can increase the reliability of defect identification and location in the single crystal’s bulk and find the quantitative and qualitative characteristics of defects by comparing the experimental and theoretical noise contrast.

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References

  1. L. N. Danil’chuk, A. O. Okunev, and V. A. Tkal’, X-Ray Diffraction Topography of Structure Defectes in Crystals on the Base of Borman Effect (Nov. Gos. Univ., Novgorod, 2006) [in Russian].

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Authors and Affiliations

  1. Yaroslav-the-Wise Novgorod State University, Veliky Novgorod, 173003, Russia

    V. A. Tkal’, I. V. Dzyuba & L. N. Danil’chuk

Authors
  1. V. A. Tkal’
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  2. I. V. Dzyuba
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  3. L. N. Danil’chuk
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Additional information

Original Russian Text © V.A. Tkal’, I.V. Dzyuba, L.N. Danil’chuk, 2009, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 10, pp. 59–65.

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Tkal’, V.A., Dzyuba, I.V. & Danil’chuk, L.N. Computer simulation of the theoretical contrast of various types of structure defects with noise factors. J. Surf. Investig. 3, 797–803 (2009). https://doi.org/10.1134/S1027451009050231

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  • DOI: https://doi.org/10.1134/S1027451009050231

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