Abstract
The process of an ultrahigh vacuum annealing of a diamond-like carbon film deposited on a silicon substrate has been studied in situ using a photoemission microscope mounted at the MAX-lab synchrotron’s radiation source. After the annealing the film was examined ex situ using an atomic force microscope. It is revealed that the graphitization of the film occurs and round formations of several microns in size with a core of ∼0.2 µm in size appear on its surface at the temperature exceeding 1000°C. Photoemission images of these formations have shown the presence of silicon on their surface. Apparently, the interaction between the carbon film and silicon substrate begins in the middle of the formation and spreads to the adjacent region at the following stage.
Similar content being viewed by others
References
A. Erdemir and C. Donnet, J. Phys. D: Appl. Phys. 39, R311 (2006).
D. I. Dolgii, E. D. Ol’shanskii, and E. P. Ryazantsev, Konvers. Mashinostr., Nos. 3–4, 31 (1999).
A. Santoni, J. Lancok, V. R. Danak, et al., Appl. Phys. A 81, 991 (2005).
C. J. Powell, Surf. Sci. 44, 29 (1974).
Author information
Authors and Affiliations
Additional information
Original Russian Text © M.B. Tsetlin, A.A. Zakharov, K.I. Maslakov, M.N. Mikheeva, I. Lindau, 2009, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 10, pp. 5–9.
Rights and permissions
About this article
Cite this article
Tsetlin, M.B., Zakharov, A.A., Maslakov, K.I. et al. Spatial structures formed during high-temperature vacuum annealing of diamond-like film deposited on a silicon substrate. J. Surf. Investig. 3, 752–755 (2009). https://doi.org/10.1134/S1027451009050152
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1027451009050152