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Spatial structures formed during high-temperature vacuum annealing of diamond-like film deposited on a silicon substrate

  • Proceedings of XXII Russian Conference on Electron Microscopy (Scintific Council of RAS on Electron Microscopy, Institute of Microelectronics Technology and High Purity Materials of RAS, Shubnikov Institute of Crystallography RAS, Chernogolovka, June 2008,
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Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques Aims and scope Submit manuscript

Abstract

The process of an ultrahigh vacuum annealing of a diamond-like carbon film deposited on a silicon substrate has been studied in situ using a photoemission microscope mounted at the MAX-lab synchrotron’s radiation source. After the annealing the film was examined ex situ using an atomic force microscope. It is revealed that the graphitization of the film occurs and round formations of several microns in size with a core of ∼0.2 µm in size appear on its surface at the temperature exceeding 1000°C. Photoemission images of these formations have shown the presence of silicon on their surface. Apparently, the interaction between the carbon film and silicon substrate begins in the middle of the formation and spreads to the adjacent region at the following stage.

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Original Russian Text © M.B. Tsetlin, A.A. Zakharov, K.I. Maslakov, M.N. Mikheeva, I. Lindau, 2009, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 10, pp. 5–9.

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Tsetlin, M.B., Zakharov, A.A., Maslakov, K.I. et al. Spatial structures formed during high-temperature vacuum annealing of diamond-like film deposited on a silicon substrate. J. Surf. Investig. 3, 752–755 (2009). https://doi.org/10.1134/S1027451009050152

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  • DOI: https://doi.org/10.1134/S1027451009050152

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