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Microdeformations of the crystal lattices of Ga-doped PbTe films on Si substrates

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Abstract

PbTe(Ga) films on Si substrates are obtained from independent sources of tellurium and metal-component vapors by the hot-wall technique. The correlation between the microdeformation of the crystal lattice and the unit-cell parameter is established using an x-ray analysis.

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Authors and Affiliations

  1. Chemistry Department, Voronezh State University, Voronezh, 394006, Russia

    M. K. Sharov & Ya. A. Ugai

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  1. M. K. Sharov
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  2. Ya. A. Ugai
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Original Russian Text © M.K. Sharov, Ya.A. Ugai, 2008, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 6, pp. 80–83.

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Sharov, M.K., Ugai, Y.A. Microdeformations of the crystal lattices of Ga-doped PbTe films on Si substrates. J. Surf. Investig. 2, 481–484 (2008). https://doi.org/10.1134/S1027451008030269

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  • DOI: https://doi.org/10.1134/S1027451008030269

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