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Magnetic force microscopy of GaAs:Mn ferromagnetic semiconductors

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Abstract

The dependence of magnetic properties of GaAs:Mn and MnAs epitaxial films grown on GaAs (001) by laser ablation of Mn and undoped GaAs in a hydrogen atmosphere under the growth conditions has been studied by magnetic force microscopy (MFM). Magnetic probe calibration for quantitative MFM measurements was performed by scanning across the slit of the magnetic-head of a tape recorder through which controlled direct current was passed. The dipole approximation was used to describe the magnetic properties of the MFM probe. Nonuniformity of the magnetization of GaAs:Mn films related to the formation of MnAs nanoinclusions, which are ferromagnetic at 300 K, has been observed. The typical scales of the spatial nonuniformity of the magnetization of GaAs:Mn films were varied from 270 to 550 nm depending on the film-growth conditions. The MnAs phase was identified by MFM measurements at an elevated temperature (up to 80°N).

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Authors and Affiliations

  1. Lobachevskii Nizhnii Novgorod State University, Nizhnii Novgorod, Russia

    D. O. Filatov & E. I. Malysheva

Authors
  1. D. O. Filatov
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  2. E. I. Malysheva
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Original Russian Text © D.O. Filatov, E.I. Malysheva, 2007, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 6, pp. 63–69.

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Filatov, D.O., Malysheva, E.I. Magnetic force microscopy of GaAs:Mn ferromagnetic semiconductors. J. Surf. Investig. 1, 352–358 (2007). https://doi.org/10.1134/S1027451007030214

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  • DOI: https://doi.org/10.1134/S1027451007030214

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