Abstract
In this work, p-type CuSCN nanorod thin films were successfully prepared on the fluorine-doped tin oxide (FTO) conductive substrate by a simple electrochemical deposition at different deposition potentials (i.e., −0.1, −0.2, −0.3, −0.4 V), and the influence of deposition potential on the microstructural and photoelectrochemical properties of the prepared CuSCN thin films was then explored. The prepared CuSCN films were nanorod arrays with a rhombohedral β-CuSCN structure, and the better CuSCN crystal structure was achieved when deposited at −0.4 V. The p-type characteristic of the electrodeposited CuSCN thin films were verified by Mott–Schottky measurements. The CuSCN nanorods thin films deposited at −0.2, −0.3, and −0.4 V produced ten times higher photocurrent intensities than the CuSCN thin film deposited at −0.1 V, and the CuSCN thin film deposited at −0.4 V exhibited the best photoelectrochemical performance. The enhanced photoelectrochemical performance of the CuSCN thin film deposited at −0.4 V could be attributed to the better crystal structure, the more charge carrier concentration as well as the more efficient charge separation and migration. This work offers a facile approach to prepare the p-type CuSCN nanorod thin films through electrochemical deposition, and regulate their photoelectrochemical performance by controlling the deposition potential.
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Published in Russian in Elektrokhimiya, 2019, Vol. 55, No. 5, pp. 568–573.
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Wang, Z., Chen, D., Wang, F. et al. Preparation and Photoelectrochemical Performances of CuSCN Thin Films Influenced by Electrodeposition Potential. Russ J Electrochem 55, 401–406 (2019). https://doi.org/10.1134/S1023193519050148
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DOI: https://doi.org/10.1134/S1023193519050148