Abstract
The thermal stability of synthesized and commercial SnO2, ZrO2, and SiC nanopowders is compared. The crystallite growth rate during the isothermal annealing of the materials at 700°C for 30 h is evaluated. The crystallites’ average size was determined by X-ray phase analysis (using the Scherrer method). The effect of impurity content on the kinetics of crystallite growth is studied for the synthesized SnO2 and ZrO2. Semiconductor and thermocatalytic sensors, based on the synthesized and commercial materials, are manufactured. The long-term stability of the sensors’ signal is compared with the thermal stability of the nanopowders.
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Original Russian Text © R.G. Pavelko, A.A. Vasil’ev, V.G. Sevast’yanov, F. Gispert-Guirado, X. Vilanova, N.T. Kuznetsov, 2009, published in Elektrokhimiya, 2009, Vol. 45, No. 4, pp. 500–506.
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Pavelko, R.G., Vasil’ev, A.A., Sevast’yanov, V.G. et al. Studies of thermal stability of nanocrystalline SnO2, ZrO2, and SiC for semiconductor and thermocatalytic gas sensors. Russ J Electrochem 45, 470–475 (2009). https://doi.org/10.1134/S1023193509040181
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DOI: https://doi.org/10.1134/S1023193509040181