Abstract
The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473–773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.
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References
V. B. Aleskovskii, Vestn. Akad. Nauk SSSR, No. 6, 48 (1975).
Yu. K. Ezhovskii, Russ. J. Phys. Chem. A 84, 261 (2010).
T. Seidel, A. Londergan, and L. Winkler, Solid State Technol., No. 5, 67 (2003).
A. P. Alekhin, A. A. Chouprik, I. P. Grigal, et al., Thin Solid Films 520, 4547 (2012).
N. Nikolaou, P. Dimitrakis, P. Normand, et al., Solid-State Electron. 68, 38 (2012).
Yu. K. Ezhovskii, Khim. Fiz. 24 4, 36 (2005).
V. K. Gromov, Introduction to Ellipsometry (Leningr. Gos. Univ., Leningrad, 1986) [in Russian].
V. I. Nefedov and V. T. Cherepin, Physical Methods in Surface Analysis of Solids (Nauka, Moscow, 1983) [in Russian].
V. I. Nefedov, X-ray Electron Spectroscopy of Chemical Compounds (Khimiya, Moscow, 1984) [in Russian].
Yu. K. Ezhovskii, Russ. Chem. Rev. 73, 195 (2004).
Yu. K. Ezhovskii, Russ. J. Phys. Chem. A 85, 447 (2011).
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Ezhovskii, Y.K., Mikhailovskii, S.V. Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation. Russ. J. Phys. Chem. 92, 547–551 (2018). https://doi.org/10.1134/S003602441803007X
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DOI: https://doi.org/10.1134/S003602441803007X