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Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge

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Abstract

The process of the formation of silicon–nitrogen nanostructures at a GaAs surface with orientation (100) and (110) by atomic layer deposition (molecular layering) is considered. The synthesis ios carried out in a vacuum unit using SiCl4 and NH3 vapors in the temperature range 423–723 K with activation of the process by a glow discharge at the ammonia pulsing stage. The conditions of the growth of silicon nitride nanostructures and the conditions of a layer mechanism of their formation are determined. It is established that, at temperatures of synthesis above 573 K, the increase in the silicon nitride layer’s thickness reaches ≈0.5 nm/cycle, which is likely to be explained by the participation of hydrazine in the process of film formation.

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FUNDING

The work was supported financially in part by the Ministry of Education and Science under a state assignment (project no. 16.1798.2017/4.6).

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  1. St. Petersburg State Institute of Technology (Technical University), 190013, St. Petersburg, Russia

    Yu. K. Ezhovskii & S. V. Mikhailovskii

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  1. Yu. K. Ezhovskii
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  2. S. V. Mikhailovskii
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Correspondence to Yu. K. Ezhovskii.

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Translated by Z. Smirnova

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Ezhovskii, Y.K., Mikhailovskii, S.V. Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge. Russ Microelectron 48, 229–235 (2019). https://doi.org/10.1134/S1063739719030041

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  • DOI: https://doi.org/10.1134/S1063739719030041

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