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Enhancement of the Schottky Effect in a Si(100)—Water System Using Porous Polymeric Track-Etched Membranes

  • Physical Chemistry of Surface Phenomena
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Abstract

The kinetics of variation in the electronic work function (EWF) of single-crystal silicon Si(100) exposed to liquid water is studied. It is shown that immersing porous film track-etched membranes (TEMs) with pore sizes of 3.0–0.1 μm in water containing Si(100) considerably reduces the EWF of single-crystal silicon. It is found that a similar effect is observed when TEMs in the form of caps are held over the surface of water containing Si(100) at a distances of around 1.5–2.0 cm. It is speculated that the occurrence of a developed surface of TEMs in an open system changes the supramolecular structure of the water and leads to the formation of associates (H2O) n with increased dipole moments (compared to molecular moments), enhancing the Schottky effect during sorption on Si(100) surfaces.

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Authors and Affiliations

  1. National Research University of Electronic Technology, Moscow, 124498, Russia

    S. N. Novikov, S. P. Timoshenkov, N. E. Korobova & E. P. Goryunova

Authors
  1. S. N. Novikov
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  2. S. P. Timoshenkov
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  3. N. E. Korobova
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  4. E. P. Goryunova
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Corresponding author

Correspondence to S. P. Timoshenkov.

Additional information

Original Russian Text © S.N. Novikov, S.P. Timoshenkov, N.E. Korobova, E.P. Goryunova, 2016, published in Zhurnal Fizicheskoi Khimii, 2016, Vol. 90, No. 4, pp. 616–621.

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Novikov, S.N., Timoshenkov, S.P., Korobova, N.E. et al. Enhancement of the Schottky Effect in a Si(100)—Water System Using Porous Polymeric Track-Etched Membranes. Russ. J. Phys. Chem. 90, 856–860 (2016). https://doi.org/10.1134/S0036024416040245

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  • DOI: https://doi.org/10.1134/S0036024416040245

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