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Calculating the energy of vacancies and adatoms in a hexagonal SiC monolayer

  • Structure of Matter and Quantum Chemistry
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Abstract

It is noted that the development of semiconductor SiC-electronics is prevented by a low quality of grown silicon carbide single crystals. It is found that structural defects of a substrate penetrating into an epitaxial layer upon subsequent homoepitaxial growth can considerably degrade a device’s characteristics. We investigate the effect of the deformation of a hexagonal SiC monolayer on vacancy stability and material properties, and study the processes of silicon and carbon adatom migration over a surface of SiC.

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Authors and Affiliations

  1. Siberian Federal University, Krasnoyarsk, 660041, Russia

    A. A. Kuzubov, N. S. Eliseeva, F. N. Tomilin & A. V. Tolstaya

  2. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russia

    A. A. Kuzubov, P. O. Krasnov, F. N. Tomilin & A. S. Fedorov

  3. Siberian State Technological University, Krasnoyarsk, 660049, Russia

    A. A. Kuzubov & P. O. Krasnov

Authors
  1. A. A. Kuzubov
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  2. N. S. Eliseeva
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  3. P. O. Krasnov
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  4. F. N. Tomilin
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  5. A. S. Fedorov
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  6. A. V. Tolstaya
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Corresponding author

Correspondence to A. A. Kuzubov.

Additional information

Original Russian Text © A.A. Kuzubov, N.S. Eliseeva, P.O. Krasnov, F.N. Tomilin, A.S. Fedorov, A.V. Tolstaya, 2012, published in Zhurnal Fizicheskoi Khimii, 2012, Vol. 86, No. 7, pp. 1207–1211.

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Kuzubov, A.A., Eliseeva, N.S., Krasnov, P.O. et al. Calculating the energy of vacancies and adatoms in a hexagonal SiC monolayer. Russ. J. Phys. Chem. 86, 1091–1095 (2012). https://doi.org/10.1134/S0036024412070138

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  • DOI: https://doi.org/10.1134/S0036024412070138

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