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Thermodynamic modeling of the behavior of silicon oxide and nitride precursors in the preparation of dielectric layers

  • Chemical Thermodynamics and Thermochemistry
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Abstract

The thermodynamic properties of several silicon-containing derivatives of asymmetric dimethylhydrazine were estimated by comparative methods. The CVD diagrams of the deposition of silicon nitride and dioxide from gas media containing these reagents were constructed.

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090, Russia

    V. A. Titov, A. A. Titov & F. A. Kuznetsov

  2. Irkutsk Institute of Chemistry, Siberian Division, Russian Academy of Sciences, Irkutsk, Russia

    V. I. Rakhlin & M. G. Voronkov

Authors
  1. V. A. Titov
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  2. V. I. Rakhlin
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  3. A. A. Titov
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  4. F. A. Kuznetsov
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  5. M. G. Voronkov
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Additional information

Original Russian Text © V.A. Titov, V.I. Rakhlin, A.A. Titov, F.A. Kuznetsov, M.G. Voronkov, 2006, published in Zhurnal Fizicheskoi Khimii, 2006, Vol. 80, No. 12, pp. 2144–2147.

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Titov, V.A., Rakhlin, V.I., Titov, A.A. et al. Thermodynamic modeling of the behavior of silicon oxide and nitride precursors in the preparation of dielectric layers. Russ. J. Phys. Chem. 80, 1907–1910 (2006). https://doi.org/10.1134/S0036024406120065

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  • DOI: https://doi.org/10.1134/S0036024406120065

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