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Features of the Mocvd Formation of MgO−RuO2 Electron-Emitting Film Structures

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Abstract

Thin-film structures based on magnesium and ruthenium oxides are obtained by metal-organic chemical vapor deposition (MOCVD) on flat silicon substrates from volatile bis-(dipivaloylmethanato)(N, N, N’,N’-tetramethylethylenediamine)magnesium(II) and tris-(acetylacetonato)ruthenium(III) complexes in the presence of oxygen. The samples are studied by SEM, EDS, powder XRD, and differential dissolution; their emission characteristics are also measured. The features of the phase formation and the microstructure in the films formed are shown and different forms of magnesium and ruthenium oxides, including nonstoichiometric ones, are found. The MOCVD experimental parameters to form composite structures with high coefficients of electron-induced secondary electron emission (up to 7.2) are determined. These materials can be used as efficient emitting coatings in modern 3D electron multipliers.

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Funding

The work was supported by RFBR project No. 18-08-01105_A.

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

    E. S. Vikulova, N. B. Morozova & I. G. Vasilyeva

  2. Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

    A. A. Pochtar

Authors
  1. E. S. Vikulova
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  2. A. A. Pochtar
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  3. N. B. Morozova
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  4. I. G. Vasilyeva
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Corresponding author

Correspondence to I. G. Vasilyeva.

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Conflict of Interests

The authors declare that they have no conflict of interests.

Russian Text © The Author(s), 2019, published in Zhurnal Strukturnoi Khimii, 2019, Vol. 60, No. 8, pp. 1404–1412.

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Vikulova, E.S., Pochtar, A.A., Morozova, N.B. et al. Features of the Mocvd Formation of MgO−RuO2 Electron-Emitting Film Structures. J Struct Chem 60, 1352–1360 (2019). https://doi.org/10.1134/S002247661908016X

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  • DOI: https://doi.org/10.1134/S002247661908016X

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