Skip to main content
SpringerLink
Log in

Structural features and conductivity of silicon films: Simulation and experiment

  • Published:
Journal of Structural Chemistry Aims and scope Submit manuscript

Abstract

Structural and photoelectric properties of low-temperature silicon microcrystalline layers are studied. The layers are obtained by a new method of electron-beam plasma produced by the electron beam interaction with the supersonic flow of initial gas mixtures. Based on the experiments and Monte Carlo calculations it is found that the dependence of the μc-Si:H layer conductivity on the degree of crystallinity of the material is described within percolation theory.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. O. Vetterl, F. Finger, R. Carius, et al.,Solar Energy Materials & Solar Cells, 62, 97–108 (2000).

    Article  Google Scholar 

  2. M. Kondo, Y. Nasuno, H. Mase, T. Wada, and A. Matsuda, J. Non-Cryst. Solids, 299–302, 108–112 (2002).

    Article  Google Scholar 

  3. S. Hegedus, Prog. Photovoltaics, 14, 393 (2006).

    Article  CAS  Google Scholar 

  4. S. Guha, Phys. Status Solidi, A207, 671–677 (2010).

    Google Scholar 

  5. S. Mukhopadhyay, R. Goswami, and S. Ray, Solar Energy Materials & Solar Cells, 93, 674–679 (2009).

    Article  CAS  Google Scholar 

  6. G. Ambrosone, U. Cosci, A. Cassinese, et al.,Thin Solid Films, 515, 7629–7633 (2007).

    Article  CAS  Google Scholar 

  7. H. Overhof, M. Otte, and M. Schmidtke, J. Non-Cryst. Solids, 227–230, 992–995 (1998).

    Article  Google Scholar 

  8. B. I. Shclovskii and A. L. éfros, Electronic Properties of Doped Semiconductors [in Russian], Nauka, Moscow (1979).

    Google Scholar 

  9. R. G. Sharafutdinov, V. M. Karsten, A. A. Polisan, O. I. Semenova, V. B. Timofeev, and S. Ya. Khmel, RFPat. No. 2002103408/12, 10.03.2003, Bull. No. 7.

  10. R. G. Sharafutdinov, S. Ya. Khmel, V. G. Shchukin, et al.,Solar Energy Materials & Solar Cells, 89, 99–111 (2005).

    Article  CAS  Google Scholar 

  11. R. Bilyalov, J. Poortmans, R. Sharafutdinov, et al.,Circuits, Devices and Systems. IEE Proceedings, 150, No. 4, 293–299 (2003).

    Article  Google Scholar 

  12. D. Das, M. Jana, A. K. Barua, et al.,Jpn. J. Appl. Phys., 41, No. 3A, 229–232 (2002).

    Article  Google Scholar 

  13. T. Kamei, P. Stradins, and A. Matsuda, Appl. Phys. Lett., 74, No. 12, 1707–1709 (1999).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. A. V. Rzhanov Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia

    P. L. Novikov & O. I. Semenova

  2. S. S. Kutateladze Institute of Thermal Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia

    V. G. Shchukin & R. G. Sharafutdinov

Authors
  1. P. L. Novikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. O. I. Semenova
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. G. Shchukin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. R. G. Sharafutdinov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to P. L. Novikov.

Additional information

Original Russian Text Copyright © 2012 by P. L. Novikov, O. I. Semenova, V. G. Shchukin, R. G. Sharafutdinov

Devoted to the Jubilee of Academician F. A. Kuznetsov

__________

Translated from Zhurnal Strukturnoi Khimii, Vol. 53, No. 4, pp. 809–813, July–August, 2012.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Novikov, P.L., Semenova, O.I., Shchukin, V.G. et al. Structural features and conductivity of silicon films: Simulation and experiment. J Struct Chem 53, 800–804 (2012). https://doi.org/10.1134/S0022476612040269

Download citation

  • Received:

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0022476612040269

Keywords

Search

Navigation