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Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma

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It is shown that the treatment of stoichiometric HfO2, which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads to a significant depletion of the film in oxygen and the formation of nonstoichiometric HfOx (\(x < 2\)). The longer the treatment time, the higher the degree of oxygen depletion. The charge transfer in the films under study occurs by phonon-assisted tunneling between oxygen vacancies serving as traps. It has been found that the \({{p}^{{ + + }}}\)-Si/HfOx/Ni structures, where the oxide layer is treated in the electron cyclotron resonance hydrogen plasma, have memristor properties: they are reversibly switched between high and low resistance states. The fabricated memristor structures are forming-free.

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ACKNOWLEDGMENTS

We acknowledge the Center of Collective Usage VTAN of the Novosibirsk State University for access to the measurement equipment.

Funding

This work was supported by the Russian Science Foundation (project no. 19-19-00286) (synthesis of samples and XPS analysis) and by the Ministry of Science and Higher Education of the Russian Federation (state contract no. 0242-2021-0003 with the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, measurements and analysis of current–voltage characteristics).

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    T. V. Perevalov, R. M. Kh. Iskhakzai, V. Sh. Aliev & V. A. Gritsenko

  2. Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    I. P. Prosvirin

  3. Novosibirsk State Technical University, 630073, Novosibirsk, Russia

    V. Sh. Aliev & V. A. Gritsenko

Authors
  1. T. V. Perevalov
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  2. R. M. Kh. Iskhakzai
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  3. I. P. Prosvirin
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  4. V. Sh. Aliev
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  5. V. A. Gritsenko
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Correspondence to T. V. Perevalov.

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The authors declare that they have no conflicts of interest.

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Translated by L. Mosina

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Perevalov, T.V., Iskhakzai, R.M., Prosvirin, I.P. et al. Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma. Jetp Lett. 115, 79–83 (2022). https://doi.org/10.1134/S0021364022020084

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  • DOI: https://doi.org/10.1134/S0021364022020084

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