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Fabrication and characterisation of memristor device using sputtered hafnium oxide

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Abstract

Being the 4th fundamental passive element, the memristor could play a vital role in emerging technology. A simple two-terminal device structure and small dimension extend the application of memristor in super-fast computing, memory and neuromorphic systems. The high dielectric constant of hafnium oxide (HfOx) attracts considerable interest in resistive switching. In this work, HfOx thin films (65 nm) were deposited over commercially purchased platinised silicon substrate by rf magnetron sputtering. Thermal evaporated silver (Ag) of 200 nm was the top electrode. The device shows bipolar resistive switching behaviour with set/reset voltages less than ± 0.5 V and a current operating range less than 1 mA without any post-deposition annealing process. This low voltage switching might be due to the formation of metallic Ag filament from active silver top electrode along with the migration of oxygen vacancies in the hafnium oxide region. The device shows reasonable retention and a high on/off ratio. This device structure can be used for low-power memory and neuromorphic applications.

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Data are available from the corresponding author upon request.

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Acknowledgements

AS acknowledges the Cochin University of Science and Technology, Kerala, India, for the research fellowship. The authors acknowledge DST-FIST for FESEM and XRD.

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The authors declare that no funds, grants or other support were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Centre of Excellence in Advanced Materials, Cochin University of Science and Technology, Kochi, Kerala, 682022, India

    Antony Sharon, P. S. Subin & Aldrin Antony

  2. University of Calicut, Thenjipalam, Kerala, 673635, India

    M. K. Jayaraj

  3. Inter University Centre for Nanomaterials and Devices, Cochin University of Science and Technology, Kochi, Kerala, 682022, India

    Aldrin Antony

  4. Department of Physics, Cochin University of Science and Technology, Kochi, Kerala, 682022, India

    Aldrin Antony

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  1. Antony Sharon
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  2. P. S. Subin
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  3. M. K. Jayaraj
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  4. Aldrin Antony
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Contributions

The authors AS and PSS have contributed to preparing the manuscript. The materials preparation, device fabrication, data collection, interpretation and the first draft of the manuscript construction were written by AS. PSS contributed to the analysis and interpretation of data. MKJ and AA contributed to the conceptualisation, supervision, data curation, writing a review and editing of the manuscript. All authors have read and approved the final manuscript for publication.

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Correspondence to Antony Sharon.

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Sharon, A., Subin, P.S., Jayaraj, M.K. et al. Fabrication and characterisation of memristor device using sputtered hafnium oxide. J Mater Sci: Mater Electron 34, 1192 (2023). https://doi.org/10.1007/s10854-023-10613-5

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  • DOI: https://doi.org/10.1007/s10854-023-10613-5

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