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Evidence for resonant scattering of electrons by spin fluctuations in LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition

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Abstract

We present measurements of resistivity ρ in highly oriented LaNiO3 films grown on LaAlO3 substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal ρ(T) ∝ T 3/2 dependence for the entire temperature interval (20 K T 300 K). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluctuations (with a characteristic energy hω sf ≃ 2.1 meV) triggered by spin-density wave propagating through the interface boundary of LaNiO3/LaAlO3 sandwich.

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Authors and Affiliations

  1. Departamento de Física, CCEN, Universidade Federal da Paraíba, 58051-970, João Pessoa, PB, Brazil

    S. Sergeenkov

  2. Departamento de Física, Universidade Federal de São Carlos, 13565-905, João Pessoa, PB, Brazil

    L. Cichetto & F. M. Araujo-Moreira

  3. LIEC—Department of Chemistry, Universidade Federal de São Carlos, 13565-905, João Pessoa, PB, Brazil

    L. Cichetto & E. Longo

  4. Institute of Chemistry, Universidade Estadual Paulista—Unesp, 14801-907, Araraquara, PB, Brazil

    L. Cichetto & E. Longo

Authors
  1. S. Sergeenkov
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  2. L. Cichetto
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  3. E. Longo
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  4. F. M. Araujo-Moreira
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Correspondence to S. Sergeenkov.

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Sergeenkov, S., Cichetto, L., Longo, E. et al. Evidence for resonant scattering of electrons by spin fluctuations in LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition. Jetp Lett. 102, 383–386 (2015). https://doi.org/10.1134/S0021364015180125

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  • DOI: https://doi.org/10.1134/S0021364015180125

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