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Surface states in a HgTe quantum well and scattering by surface roughness

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Abstract

Scattering of two-dimensional electrons in wide (d = 18–22 nm) HgTe-based quantum wells has been thoroughly studied. The mobility has been found to reach a maximum and then to decrease at two-dimensional electron densities above (2–6) × 1011 cm−2 owing to scattering by roughness of the quantum well. The theory of scattering by roughness has been elaborated taking into account transformation of the wavefunction with an increase in the electron density. Good agreement of this theory with the experiment indicates the existence of surface states at the interfaces of the wide HgTe quantum well.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    A. A. Dobretsova, L. S. Braginskii, M. V. Entin, Z. D. Kvon, N. N. Mikhailov & S. A. Dvoretsky

  2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia

    A. A. Dobretsova, L. S. Braginskii, M. V. Entin & Z. D. Kvon

Authors
  1. A. A. Dobretsova
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  2. L. S. Braginskii
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  3. M. V. Entin
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  4. Z. D. Kvon
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  5. N. N. Mikhailov
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  6. S. A. Dvoretsky
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Correspondence to A. A. Dobretsova.

Additional information

Original Russian Text © A.A. Dobretsova, L.S. Braginskii, M.V. Entin, Z.D. Kvon, N.N. Mikhailov, S.A. Dvoretsky, 2015, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2015, Vol. 101, No. 5, pp. 360–364.

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Dobretsova, A.A., Braginskii, L.S., Entin, M.V. et al. Surface states in a HgTe quantum well and scattering by surface roughness. Jetp Lett. 101, 330–333 (2015). https://doi.org/10.1134/S0021364015050070

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  • DOI: https://doi.org/10.1134/S0021364015050070

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