Abstract
The dependences of the photoemission current and effective electron affinity on the submonolayer cesium coverage at the adsorption of Cs on a GaAs(001) surface, as well as the kinetics of the photocurrent and affinity after the termination of Cs deposition, which is caused by the relaxation of the structure of a nonequilibrium adsorption layer, have been experimentally studied. The revealed features in the dependence of the photocurrent on the Cs coverage are attributed to a nonmonotonic behavior of the surface band bending in the Cs/GaAs(001) system. It has been established that a relaxation decrease in the photocurrent in the case of coverages smaller than half a monolayer is due to the relaxation of the band bending, whereas an increase in the photocurrent at larger coverages is caused by the relaxation of the electron affinity.
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Original Russian Text © A.G. Zhuravlev, M.L. Savchenko, A.G. Paulish, V.L. Alperovich, 2013, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2013, Vol. 98, No. 8, pp. 513–517.
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Zhuravlev, A.G., Savchenko, M.L., Paulish, A.G. et al. Photoemission from p-GaAs(001) with nonequilibrium cesium overlayers. Jetp Lett. 98, 455–459 (2013). https://doi.org/10.1134/S0021364013210169
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DOI: https://doi.org/10.1134/S0021364013210169