Abstract
Photoemission studies of the electronic structure of the vicinal SiC(100) 4° surface, which was grown using a new substrate atom substitution method, and the Cs/SiC(100) 4° interface have been performed for the first time. The modification of spectra of the valence band and C 1s and Si 2p core levels in the process of formation of the Cs/SiC(100) 4° interface was analyzed. The suppression of the surface SiC state with a binding energy of 2.8 eV and the formation of a cesium-induced state with a binding energy of 10.5 eV were observed. The modification of the complex component structure in the spectrum of C 1s core level has been detected and examined for the first time. It was found that Cs adsorption on the vicinal SiC(100) 4° surface results in intercalation of graphene islands on SiC(100) 4° with Cs atoms.
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Original Russian Text © G.V. Benemanskaya, P.A. Dementev, S.A. Kukushkin, M.N. Lapushkin, A.V. Osipov, S.N. Timoshnev, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 23, pp. 51–57.
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Benemanskaya, G.V., Dementev, P.A., Kukushkin, S.A. et al. Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface. Tech. Phys. Lett. 42, 1145–1148 (2016). https://doi.org/10.1134/S1063785016120026
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DOI: https://doi.org/10.1134/S1063785016120026