Features of atomic processes at the formation of a wetting layer and nucleation of three-dimensional Ge islands on Si(111) and Si(100) surfaces

Abstract

The intermediate stages of the formation of a Ge wetting layer on Si(111) and Si(100) surfaces under quasiequilibrium grow conditions have been studied by means of scanning tunneling microscopy. The redistribution of Ge atoms and relaxation of mismatch stresses through the formation of surface structures of decreased density and faces different from the substrate orientation have been revealed. The sites of the nucleation of new three-dimensional Ge islands after the formation of the wetting layer have been analyzed. Both fundamental differences and common tendencies of atomic processes at the formation of wetting layers on Si(111) and Si(100) surfaces have been demonstrated. The density of three-dimensional nuclei on the Si(111) surface is determined by changed conditions for the surface diffusion of Ge adatoms after change in the surface structure. Transition to three-dimensional growth on the Si(100) surface is determined by the nucleation of single {105} faces on the rough Ge(100) surface.