Abstract
This work implements three fast measurement techniques based on the measure–stress–measure (MSM) method. These techniques, namely, measuring–around–\({{V}_{{{\text{th}}}}}\), one–point on–the–fly (OTF), and pulsed current-voltage (PIV), were used to characterize three different technologies of metal–oxide–semiconductor field-effect transistors (MOSFETs) with same gate dielectric silicon–dioxide (SiO2) and various thicknesses \({{t}_{{{\text{ox}}}}}\) = 20 nm, 4 nm, 2.3 nm. Moreover, well–configured electrical stress biasing has been performed to discuss the dielectric degradation of these devices using those characterization techniques. The pros and cons of the used techniques are well discussed based on our results. Furthermore, experimental results showed that threshold voltage shift (\(\Delta {{V}_{{{\text{th}}}}}\)) follows a power law time dependence with time exponent (n) being 0.16 for molecular hydrogen (H2) diffusing species and 0.25 for hydrogen atoms (H) diffusing species. We have found that the thicker the SiO2 dielectric the more the oxide traps (\({{N}_{{{\text{ot}}}}}\)) contribute to the resulting degradation. However, the dependency between SiO2 dielectric thickness and oxide traps could not be necessarily linear.
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DATA AVAILABILITY
The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
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ACKNOWLEDGMENTS
This work was supported by Directorate General for Scientific Research and Technological Development/Ministry of High Education and Scientific Research of Algeria (DGRSDT/MESRS) under the National Funding of Research (FNR) contract Νo. 05-4/FCS/DMN/ CDTA/PT 19-21.
In addition, this research work would not have been possible without the contribution of FCS team members, Microelectronics and Nanotechnology Division of CDTA, so they are gratefully acknowledged for their precious helps and discussions. This work is also done in collaboration with LSS team of IGEE (ex: INELEC), many thanks for their counsels.
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All authors contributed to the study conception and design. Material preparation, data collection and analysis, and manuscript writing were performed by DhiaElhak Messaoud. Measurements were taken with the help of Mohamed Boubaaya and Boumediene Zatout. Samples study and preparation were done by Amel Chenouf. Data analysis and results discussion were achieved with the help of Boualem Djezzar and Abdelmadjid Benabdelmoumene. Abdelkader Zitouni has commented on the manuscript.
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Messaoud, D.E., Djezzar, B., Boubaaya, M. et al. Fast Methods for Studying the Effect of Electrical Stress on SiO2 Dielectrics in Metal-Oxide-Semiconductor Field-Effect Transistors. Instrum Exp Tech 66, 1095–1105 (2023). https://doi.org/10.1134/S0020441223060106
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DOI: https://doi.org/10.1134/S0020441223060106