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Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition

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Abstract

The results of testing a prototype of a surface-barrier detector of charged particles based on single-crystal epitaxial layers of diamond are presented. Diamond films with p-type conduction with a boron concentration of (4–8) × 1014 cm–3 65 μm thick were grown using gas-phase deposition on heavily doped diamond substrates grown at high pressure and high temperature. A 17 mm2 Schottky barrier was formed by sputtering Pt with a thickness of 30 nm. When irradiated from the 238Pu α-source (the 5.499 keV line) a detector with an external bias of 90 V demonstrated a charge collection efficiency close to 100% and a FWHM high energy resolution of 0.56%. The obtained energy resolution is at the level of standard silicon detectors.

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Correspondence to S. V. Chernykh.

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This work received financial support from the Ministry of Education and Science of the Russian Federation (Subsidy Grant Agreement no. 075-02-2018-210 dated November 26, 2018, unique identifier of the agreement RFMEFI57818X0266).

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Chernykh, S.V., Tarelkin, S.A., Chernykh, A.V. et al. Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition. Instrum Exp Tech 62, 473–479 (2019). https://doi.org/10.1134/S0020441219040158

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