Abstract
A stabilizer of micro- and small currents based on a field Hall-effect sensor is considered. The field-effect Hall sensor is an integration of a conventional Si Hall element and an Si thin-film doublegate field-effect transistor. It is shown that formation of feedbacks between Hall contacts, field gates, and power sources makes it possible to stabilize the sensor current with accuracy of not worse than 1% when the load resistance changes by an order and the temperature varies in the 25–65°C range.
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Mordkovich, V.N., Baranochnikov, M.L., Leonov, A.V., Mokrushin, A.D., Omel’yanovskaya, N.M., and Pazhin, D.M., Datchiki Sistemy, 2003, no. 7, p. 33.
Baranochnikov, M.L., Leonov, A.V., Mordkovich, V.N., and Pazhin, D.M., Instrum. Exp. Tech., 2012, vol. 55, no. 6, p. 701.
Popovic, R.S., Hall Effect Devices, Bristol, Philadelphia: IOP, 2004, 2nd ed.
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Original Russian Text © A.V. Leonov, M.I. Pavlyuk, 2016, published in Pribory i Tekhnika Eksperimenta, 2016, No. 6, pp. 34–36.
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Leonov, A.V., Pavlyuk, M.I. A stabilizer of micro- and small currents based on a field hall-effect sensor with autocompensation of the temperature effect. Instrum Exp Tech 59, 808–809 (2016). https://doi.org/10.1134/S0020441216060026
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DOI: https://doi.org/10.1134/S0020441216060026