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A silicon field-effect hall sensor with an extended operating temperature range

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Abstract

The characteristics of thin-film Si MISIM magnetic transistors with a built-in accumulated channel and partially depleted quasi-neutral area are studied. The design of transistors is integrated with a Hall element. It is shown experimentally that transistors of this type, which were named field-effect Hall sensors (FEHSs) and made by the “silicon-on-insulator” (SOI) technology, provide measurements of the magnetic induction in a temperature range of 1.7–605 K. Theoretical estimates show that the upper operating temperature limit of the FEHS can be about 850 K.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences (IMT RAS), ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432, Russia

    A. V. Leonov, A. A. Malykh & V. N. Mordkovich

  2. JSC ICC Milandr, Georgievskii pr. 5, Zelenograd, Moscow, 124498, Russia

    M. I. Pavlyuk

Authors
  1. A. V. Leonov
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  2. A. A. Malykh
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  3. V. N. Mordkovich
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  4. M. I. Pavlyuk
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Corresponding author

Correspondence to V. N. Mordkovich.

Additional information

Original Russian Text © A.V. Leonov, A.A. Malykh, V.N. Mordkovich, M.I. Pavlyuk, 2016, published in Pribory i Tekhnika Eksperimenta, 2016, No. 5, pp. 104–108.

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Leonov, A.V., Malykh, A.A., Mordkovich, V.N. et al. A silicon field-effect hall sensor with an extended operating temperature range. Instrum Exp Tech 59, 724–727 (2016). https://doi.org/10.1134/S0020441216050109

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  • DOI: https://doi.org/10.1134/S0020441216050109

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