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Studying voltage recovery processes on silicon photomultipliers

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Abstract

Dynamics of voltage recovery processes on silicon photomultipliers is experimentally and theoretically investigated. Special features of the voltage recovery in crystals with a great number of pixels are studied. Considerations on the configuration and selection of filter-element values in the supply circuit are stated. The expression for calculating the recovery time with an arbitrary number of operated pixels, taking the total number of pixels of the silicon photomultiplier, resistance value of horizontal current spreading over p- and n-regions of the pixels, and outer-element values into account, is obtained. The analytic expressions and SPICE simulation data are compared with the experimentally measured voltages across the load.

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Authors and Affiliations

  1. State Research Production Enterprise Region, Kashirskoe sh. 13a, Moscow, 115230, Russia

    A. D. Pleshko

  2. National Research Nuclear University Moscow Engineering Physics Institute, Kashirskoe sh. 31, Moscow, 115409, Russia

    P. Zh. Buzhan, A. L. Ilyin, E. V. Popova & A. A. Stifutkin

  3. EXELTEK, Office 247, ul. Staraya Basmannaya 20, korp. 5, Moscow, 105066, Russia

    S. I. Ageev

Authors
  1. A. D. Pleshko
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  2. P. Zh. Buzhan
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  3. A. L. Ilyin
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  4. E. V. Popova
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  5. A. A. Stifutkin
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  6. S. I. Ageev
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Additional information

Original Russian Text © A.D. Pleshko, P.Zh. Buzhan, A.L. Ilyin, E.V. Popova, A.A. Stifutkin, S.I. Ageev, 2013, published in Pribory i Tekhnika Eksperimenta, 2013, No. 6, pp. 60–68.

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Pleshko, A.D., Buzhan, P.Z., Ilyin, A.L. et al. Studying voltage recovery processes on silicon photomultipliers. Instrum Exp Tech 56, 697–705 (2013). https://doi.org/10.1134/S0020441213060092

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  • DOI: https://doi.org/10.1134/S0020441213060092

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