Abstract
The results of studying reverse switch-on dynistors (RSDs) with an operating voltage of 2 kV and a 12-mm diameter of structures that switch high-power current pulses of submicrosecond duration are presented. It is shown that, in this time interval, the switching energy losses in RSDs are much lower than those for thyristors and IGBT transistors having almost the same area of semiconductor structures and a maximum acceptable blocked voltage. The switching time at which the use of RSDs becomes low-efficient is determined (<0.4 μs).
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Original Russian Text © S.V. Korotkov, A.L. Zhmodikov, 2011, published in Pribory i Tekhnika Eksperimenta, 2011, No. 1, pp. 68–71.
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Korotkov, S.V., Zhmodikov, A.L. Prospects of using reverse switch-on dynistors in the modes of switching submicrosecond current pulses. Instrum Exp Tech 54, 61–64 (2011). https://doi.org/10.1134/S0020441211010076
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DOI: https://doi.org/10.1134/S0020441211010076