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Switching avalanche S-diodes based on GaAs multilayer structures

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Abstract

Results of studying volt-ampere characteristics of switching avalanche S-diodes are presented. It is shown that, for S-diodes based on structures obtained by diffusing Cr into GaAs, a larger part of the applied reverse-biased voltage drops across a high-resistance π-region but not across the space-charge region. In this case, the sharp increase of the current is caused by the electron injection from the forward-biased contact to the π-layer. In this respect, a new GaAs-based structure doped with Cr and Fe (GaAs:Cr, Fe) is studied. It is shown that, in S-diodes based on (GaAs:Cr, Fe)-structures, the current increase under a reverse bias is caused by avalanche processes in the space-charge area. This leads to producing a negative differential resistance section with subnanosecond switching from the closed to open state. The switching voltages of S-diodes on GaAs:Cr, Fe structures vary from 350 to 650 V, and the switching times do not exceed 0.5 ns.

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Authors and Affiliations

  1. Kuznetsov Siberian Physical Technical Institute, Tomsk State University, pl. Novosobornaya 1, Tomsk, 6340050, Russia

    I. A. Prudaev, S. S. Khludkov, M. S. Skakunov & O. P. Tolbanov

Authors
  1. I. A. Prudaev
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  2. S. S. Khludkov
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  3. M. S. Skakunov
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  4. O. P. Tolbanov
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Correspondence to I. A. Prudaev.

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Original Russian Text © I.A. Prudaev, S.S. Khludkov, M.S. Skakunov, O.P. Tolbanov, 2010, published in Pribory i Tekhnika Eksperimenta, 2010, No. 4, pp. 68–73.

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Prudaev, I.A., Khludkov, S.S., Skakunov, M.S. et al. Switching avalanche S-diodes based on GaAs multilayer structures. Instrum Exp Tech 53, 530–535 (2010). https://doi.org/10.1134/S002044121004010X

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  • DOI: https://doi.org/10.1134/S002044121004010X

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