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p-Hg0.8Cd0.2Te based large area fast photoresistor

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Abstract

The design and manufacturing technology of large area fast photoresistors by drawing additional electrodes on their back side are described. The measurement of the modernized p-Hg0.8Cd0.2Te based pho-toresistornal has shown that its operation speed increases inversely proportional to the reduction of the distance between adjacent electrodes.

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Authors and Affiliations

  1. Institute of Physics, Azerbaijan National Academy of Sciences, H. Javid pr. 33, Baku, AZ 1143, Azerbaijan

    A. A. Aliev, Sh. M. Kuliev, A. K. Mamedov & R. I. Mukhtarova

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  1. A. A. Aliev
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  2. Sh. M. Kuliev
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  3. A. K. Mamedov
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  4. R. I. Mukhtarova
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Additional information

Original Russian Text © A.A. Aliev, Sh.M. Kuliev, A.K. Mamedov, R.I. Mukhtarova, 2010, published in Pribory i Tekhnika Eksperimenta, 2010, No. 3, pp. 137–138.

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Aliev, A.A., Kuliev, S.M., Mamedov, A.K. et al. p-Hg0.8Cd0.2Te based large area fast photoresistor. Instrum Exp Tech 53, 447–448 (2010). https://doi.org/10.1134/S002044121003022X

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  • DOI: https://doi.org/10.1134/S002044121003022X

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