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A technique for recording and analyzing the isothermal relaxation of the capacitance of semiconductor heterostructures

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Abstract

A technique for recording and processing the results of measuring the isothermal relaxation of the capacitance that allows determination of the parameters of the charge-localization centers in semiconductor heterostructures is described. The experimental setup employed ensures recording of the dependences of the structure capacitance on the relaxation time within a wide temperature range. The obtained data are recorded into the computer memory. By choosing the parameters of recording of the capacitance relaxation and the parameters of the subsequent processing of experimental data within the framework of the deep4evel transient spectroscopy technique, it is possible, when determining the parameters of the charge localization centers, to reduce the effects from superposition of the peaks corresponding to the centers with close values of the emission time constant. The results of studying the activation energy of deep centers in the subsurface region of gallium arsenide are presented to illustrate the capabilities of the setup and technique developed.

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Authors and Affiliations

  1. Voronezh State Technological Academy, pr. Revolyutsii 19, Voronezh, 394000, Russia

    N. N. Bezryadin, G. I. Kotov, A. V. Kadantsev, L. V. Vasil’eva & Yu. N. Vlasov

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  1. N. N. Bezryadin
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  2. G. I. Kotov
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  3. A. V. Kadantsev
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  4. L. V. Vasil’eva
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  5. Yu. N. Vlasov
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Additional information

Original Russian Text © N.N. Bezryadin, G.I. Kotov,A.V. Kadantsev, L.V. Vasil’eva, Yu.N. Vlasov, 2010, published in Pribory i Tekhnika Eksperimenta, 2010, No. 3, pp. 119–122.

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Bezryadin, N.N., Kotov, G.I., Kadantsev, A.V. et al. A technique for recording and analyzing the isothermal relaxation of the capacitance of semiconductor heterostructures. Instrum Exp Tech 53, 430–433 (2010). https://doi.org/10.1134/S0020441210030188

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  • DOI: https://doi.org/10.1134/S0020441210030188

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