Abstract
Switches of megawatt nanosecond pulses based on high-voltage (12 kV) assemblies of drift step-recovery diodes (DSRDs) and deep-level dynistors (DLDs) are described. Circuit diagrams allowing their use in laser technology are considered. Results of testing of the diode and dynistor switches in power supply circuits of nitrogen lasers at a frequency of 100 Hz are presented. Their high efficiency in shaping of pumping current pulses with a rise time of 10 ns and amplitudes of 500 A (a DSRD switch) and 900 A (a DLD switch) is shown.
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Grekhov, I.V., Korotkov, S.V., and Rodin, P.B., IEEE Trans. Plasma Sci., 2008, vol. 36, no. 2, p. 378.
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Original Russian Text © S.V. Korotkov, Yu.V. Aristov, V.B. Voronkov, A.L. Zhmodikov, A.K. Kozlov, D.A. Korotkov, A.G. Lyublinskii, 2009, published in Pribory i Tekhnika Eksperimenta, 2009, No. 5, pp. 94–97.
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Korotkov, S.V., Aristov, Y.V., Voronkov, V.B. et al. Semiconductor switches of laser pumping pulses of nanosecond duration. Instrum Exp Tech 52, 699–702 (2009). https://doi.org/10.1134/S0020441209050108
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DOI: https://doi.org/10.1134/S0020441209050108