Abstract
An effective method of computer calculation and optimization of characteristics of multioctave low-noise transistor amplifiers is presented. The method was used to design a three-stage amplifier built on the basis of microstrip technology using packaged transistors and chip resistors and capacitors. In a 0.5- to 12.0-GHz frequency band, the following characteristics are obtained: a noise ratio of 2.2–3.2 dB, a gain of >25.6 dB, a gain flatness of ±1.2 dB, a voltage standing wave ratio of <2.8 and <2.2 at the input and output, respectively.
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Original Russian Text © A. Yanev, V.Z. Ranev, P. Zubov, 2009, published in Pribory i Tekhnika Eksperimenta, 2009, No. 2, pp. 53–56.