Abstract
The effect of an inductance in the circuit of the source of a field-effect transistor on the character of switching processes in high-frequency converters is analyzed. It is shown that the inductance in the source circuit has a crucial effect on all stages of the transistor switching process and limits the maximum efficiency of the converter that includes this transistor. Conditions for attaining the ultrafast MOS-transistor switching-on and-off modes are formulated.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Blicher, Field-Effect and Bipolar Power Transistor Physics, New York: Academic, 1981.
Maler, R. and Keimins, R., Elementy integral’nykh skhem (Elements of Integrated Circuits), Moscow: Mir, 1989.
Clemente, S., Pelly, B.R., and Insidori, L., Silovye poluprovodnikovye pribory (Power Semiconductor Devices), Voronezh, 1995, pp. 195–215.
Togatov, V.V., Gagarskii, S.V., Gnatyuk, P.A., and Ternovskii, D.S., Prib. Tekh. Eksp., 2007, no. 6, p. 134.
Togatov, V.V. and Gnatyuk, P.A., Prib. Tekh. Eksp., 2006, no. 2., p. 89 [Instrum. Exp. Tech. (Engl. Transl.), no. 2, p. 228].
Togatov, V.V. and Gnatyuk, P.A., Fiz. Tekh. Poluprovodn., 2005, vol. 39. no. 3, p. 378 [Semiconductors (Engl. Transl.), no. 3, p. 360].
Author information
Authors and Affiliations
Additional information
Original Russian Text © V.V. Togatov, P.A. Gnatyuk, D.S. Ternovskii, 2008, published in Pribory i Tekhnika Eksperimenta, 2008, No. 6, pp. 32–43.
Rights and permissions
About this article
Cite this article
Togatov, V.V., Gnatyuk, P.A. & Ternovskii, D.S. Switching processes in high-frequency converters. Instrum Exp Tech 51, 808–819 (2008). https://doi.org/10.1134/S0020441208060079
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020441208060079