Determining electrophysical characteristics of metal-oxide-semiconductor structures from the data of voltage-capacitance analysis of the depletion region of a semiconductor surface

Abstract

The oxide layer in nanotransistors with metal-oxide-semiconductor (MOS) structures may be as thin as 20Å. The physical diagnostics of such structures via conventional methods of voltage-capacitance characteristics (VFCs) is impossible without taking into account the usually disregarded effects of degeneracy and dimensional quantization of the electron gas. However, as the oxide-layer thickness decreases, these effects make an increasingly substantial contribution to capacitance C of the MOS structure not only at C≅C _i (where C _i is the “oxide capacitance”) but also at C < C _i . In this study, we have developed a general method for determining the principal characteristics of MOS structures from the data of analysis of the VFCs in the region of the Schottky depletion layer. The doping level, the surface potential, the semiconductor surface charge, the voltage of “flat bands,” oxide capacitance C _i , the voltage drop across the oxide, and the sign and density of the charge fixed in it can be found at an accuracy of ≅0.1% within the framework of a single experiment regardless of the oxide-layer thickness and without using fitting parameters and a priori assumptions concerning the properties of the electron gas in the accumulation and inversion layers. The stages and results of the implementation of this method are demonstrated by the results of experiments performed on an n-Si-based MOS structure with a 171.2 Å-thick oxide layer.