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A device for testing a fast nanographite photodetector at high temperatures

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Abstract

The results of tests of a fast photodetector based on a nanographite film grown on a silicon substrate are presented. The temperature dependence of the optoelectric signal from the photodetector in the range 300–800 K has been studied under the vacuum conditions. It has been shown experimentally that, when the temperature increases from 300 to 625 K, the photodetector’s sensitivity decreases by approximately 30%. When the temperature increases to higher values, the optoelectric-signal amplitude drops linearly and is halved at T = 740 K as compared to room temperature. Extrapolation of the experimental data shows that the optoelectric response of the photodetector disappears at T > 1000 K.

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Authors and Affiliations

  1. Institute of Applied Mechanics, Ural Division, Russian Academy of Sciences, ul. T. Baramzinoi 34, Izhevsk, 426067, Russia

    G. M. Mikheev, R. G. Zonov & D. G. Kalyuzhny

  2. Physics Faculty, Moscow State University, Vorob’evy gory, Moscow, 119992, Russia

    A. N. Obraztsov

Authors
  1. G. M. Mikheev
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  2. R. G. Zonov
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  3. A. N. Obraztsov
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  4. D. G. Kalyuzhny
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Correspondence to G. M. Mikheev.

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Original Russian Text © G.M. Mikheev, R.G. Zonov, A.N. Obraztsov, D.G. Kalyuzhny, 2008, published in Pribory i Tekhnika Eksperimenta, 2008, No. 3, pp. 137–142.

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Mikheev, G.M., Zonov, R.G., Obraztsov, A.N. et al. A device for testing a fast nanographite photodetector at high temperatures. Instrum Exp Tech 51, 456–461 (2008). https://doi.org/10.1134/S002044120803024X

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  • DOI: https://doi.org/10.1134/S002044120803024X

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