Abstract
Two methods for measuring solidification point T S of the GKGh-136 silicone liquid are described. T S ≌ 125 K is determined by the first method from specific features of the temperature dependence of the resistance of an organic quasi-2D conductor in a GKGh-136 droplet with a size of ∼1 mm. T S ≌ 130 K is assessed by the second method from the occurrence of a specific feature in the temperature dependence of the resistance of the GKGh-136 and fine-dispersed graphite mixture, which is caused by desorption of helium in the sample volume during warming-up >T S .
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Original Russian Text © L.I. Buravov, V.N. Zverev, A.V. Kazakova, N.D. Kushch, A.I. Manakov, 2008, published in Pribory i Tekhnika Eksperimenta, 2008, No. 1, pp. 169–170.
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Buravov, L.I., Zverev, V.N., Kazakova, A.V. et al. Measurements of the solidification point of the GKGh-136 silicone liquid. Instrum Exp Tech 51, 156–157 (2008). https://doi.org/10.1134/S0020441208010223
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DOI: https://doi.org/10.1134/S0020441208010223