Abstract
The results of investigation of n ++ p + pp + silicon detector structures manufactured from p silicon are presented. These detectors demonstrate the effect of internal amplification of a signal (with a gain of 20) with retained properties of the detector as a spectrometric device. An efficient lowering of the energy level for the detected ionizing radiation is demonstrated.
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Original Russian Text © O.F. Vikhlyantsev, S.A. Golubkov, Yu.B. Gurov, K.N. Gusev, N.N. Egorov, N.I. Zamyatin, Yu.F. Kozlov, K.A. Kon’kov, V.S. Pantuev, V.G. Sandukovskii, A.I. Sidorov, A.S. Starostin, J. Yurkowski, 2007, published in Pribory i Tekhnika Eksperimenta, 2007, No. 2, pp. 59–64.
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Vikhlyantsev, O.F., Golubkov, S.A., Gurov, Y.B. et al. Investigation of the internal amplification effect in planar p-silicon structures. Instrum Exp Tech 50, 196–201 (2007). https://doi.org/10.1134/S0020441207020042
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DOI: https://doi.org/10.1134/S0020441207020042