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The use of capacitive charge division in silicon microstrip detectors

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Abstract

The structure of silicon microstrip detectors with a great number of passive strips located between the readout (active) strips is described. Owing to the use of capacitive charge division among the passive and active strips, it is possible to essentially increase the readout pitch and to reduce the number of electronic readout channels by five to ten times. Since the cost of the front-end electronics exceeds significantly that of the detectors themselves, this method allows the cost of the entire detector-electronics system to be decreased severalfold without substantial deterioration of the position resolution.

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Authors and Affiliations

  1. Skobel’tsyn Institute of Nuclear Physics, Moscow State University, Vorob’evy gory, Moscow, 119992, Russia

    G. L. Bashindzhagyan & N. A. Korotkova

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  1. G. L. Bashindzhagyan
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  2. N. A. Korotkova
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Original Russian Text © G.I. Bashindzhagyan, N.A. Korotkova, 2006, published in Pribory i Tekhnika Eksperimenta, 2006, No. 3, pp. 27–40.

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Bashindzhagyan, G.L., Korotkova, N.A. The use of capacitive charge division in silicon microstrip detectors. Instrum Exp Tech 49, 318–330 (2006). https://doi.org/10.1134/S0020441206030043

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  • DOI: https://doi.org/10.1134/S0020441206030043

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