Skip to main content
Log in

Electrical and Photoelectrochemical Properties of Thin MoS2 Films Produced by Electrodeposition

  • Published:
Inorganic Materials Aims and scope

Abstract—

Thin n-type MoS2 films have been produced by electrochemical deposition from aqueous electrolytes and some of their electrical and photoelectrochemical properties have been studied using advanced characterization techniques (X-ray diffraction, scanning electron microscopy, and Raman spectroscopy). We have measured the current–voltage characteristics of the films and their electrical conductivity as a function of temperature and evaluated their temperature sensitivity coefficient (B = 16 376 K), the temperature coefficient of their electrical resistance (α = 0.182 K–1 at 400 K and 0.095 K–1 at 500 K), and their band gap (Eg = 1.41 eV). The results demonstrate that thin MoS2 films have attractive photoelectrochemical properties and can be used in solar energy conversion.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.

Similar content being viewed by others

REFERENCES

  1. Shin, S.Y., Cheong, B., and Choi, Y.G., Local structural environments of Ge doped in eutectic Sb–Te film before and after crystallization, J. Phys. Chem. Solids, 2018, vol. 117, pp. 81–85.https://doi.org/10.1016/j.jpcs.2018.02.021

    Article  CAS  Google Scholar 

  2. Aliyev, A.Sh., Elrouby, M., and Cafarova, S.F., Electrochemical synthesis of molybdenum sulfide semiconductor, Mater. Sci. Semicond. Process., 2015, vol. 32, pp. 31–39.https://doi.org/10.1016/j.mssp.2015.01.006

    Article  CAS  Google Scholar 

  3. Munshi, A.H., Sasidharan, N., Pinkayan, S., Barth, K.L., Sampath, W.S., and Ongsakul, W., Thin-film CdTe photovoltaics—the technology for utility scale sustainable energy generation, J. Sol. Energy, 2018, vol. 173, pp. 511–516.https://doi.org/10.1016/j.solener.2018.07.090

    Article  CAS  Google Scholar 

  4. Aliyev, A.Sh., Majidzade, V.A., Soltanova, N.Sh., Tagiyev, D.B., and Fateev, V.N., Some features of electrochemically deposited CdS nanowires, Chemical Problems, 2018, vol. 16, no. 2, pp. 178–185. https://doi.org/10.32737/2221-8688-2018-2-178-185

  5. Chen, C., Bobela, D.C., Yang, Y., Lu, Sh., Zeng, K., Ge, C., Yang, B., Gao, L., Zhao, Y., Beard, M.C., and Tang, J., Characterization of basic physical properties of Sb2Se3 and its relevance for photovoltaics, Front. Optoelectron., 2017, vol. 10, no. 1, pp. 18–30.https://doi.org/10.1007/s12200-017-0702-z

    Article  Google Scholar 

  6. Majidzade, V.A., The effect of various factors on the composition of electrolytic thin films Sb–Se, Chemical Problems, 2018, vol. 16, no. 3, pp. 331–336.https://doi.org/10.32737/2221-8688-2018-3-331-336

    Article  Google Scholar 

  7. Henríquez, R., Vasquez, C., Briones, N., Muñoz, E., Leyton, P., and Dalchiele, E.A., Single phase FeS2 (pyrite) thin films prepared by combined electrodeposition and hydrothermal low temperature techniques, Int. J. Electrochem. Sci., 2016, vol. 11, pp. 4966–4978.https://doi.org/10.20964/2016.06.17

    Article  CAS  Google Scholar 

  8. Fateev, V.N., Alexeeva, O.K., Korobtsev, S.V., Seregina, E.A., Fateeva, T.V., Grigoriev, A.S., and Aliyev, A.Sh., Problems of accumulation and storage of hydrogen, Chemical Problems, 2018, vol. 16, no. 4, pp. 453–483. https://doi.org/10.32737/2221-8688-2018-4-453-483

  9. Kulova, T.L., Nikolaev, I.I., Fateev, V.N., and Aliyev, A.Sh., Modern electrochemical systems of energy accumulation, Chemical Problems, 2018, vol. 16, no. 1, pp. 9–34.https://doi.org/10.32737/2221-8688-2018-1-9-34

    Article  Google Scholar 

  10. Kim, S., Konar, A., Hwang, W.S., Lee, J.H., Lee, J., Yang, J., Jung, C., Kim, H., Yoo, J.B., Choi, J.Y., Jin, Y.W., Lee, S.Y., Jena, D., Choi, W., and Kim, K., High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals, Nat. Commun., 2012, no. 3, pp. 1011–1013.https://doi.org/10.1038/ncomms2018

  11. Choi, W., Cho, M.Y., Konar, A., Lee, J.H., Cha, G.-B., Hong, S.C., Kim, S., Kim, J., Jena, D., Joo, J., and Kim, S., High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared, Adv. Mater., 2012, vol. 24, pp. 5832–5836.https://doi.org/10.1002/adma.201201909

    Article  CAS  PubMed  Google Scholar 

  12. Radisavljevic, B., Whitwick, M.B., and Kis, A., Integrated circuits and logic operations based on single-layer MoS2, ACS Nano, 2011, no. 5, pp. 9934–9938.https://doi.org/10.1021/nn203715c

  13. Wang, H., Yu, L., Lee, Y.-H., Shi, Y., Hsu, A., Chin, M.L., Li, L.-J., Dubey, M., Kong, J., and Palacios, T., Integrated circuits based on bilayer MoS2 transistors, Nano Lett., 2012, no. 12, pp. 4674–4680.https://doi.org/10.1021/nl302015v

  14. Yin, Z.Y., Li, H., Jiang, L., Shi, Y.M., Sun, Y.H., Lu, G., Zhang, Q., Chen, X.D., and Zhang, H., Single-layer MoS2 phototransistors, ACS Nano, 2012, no. 6, pp. 74–80.

  15. Lee, H.S., Min, S.W., Chang, Y.G., Park, M.K., Nam, T., Kim, H., Kim, J.H., Ryu, S., and Im, S., MoS2 nanosheet phototransistors with thickness-modulated optical energy gap, Nano Lett., 2012, no. 12, pp. 3695–3700.https://doi.org/10.1021/nl301485q

  16. King, L.A., Zhao, W., Chhowalla, M., Riley, D.J., and Eda, G., Photoelectrochemical properties of chemically exfoliated MoS2, J. Mater. Chem. A, 2013, vol. 31, no. 1, pp. 8935–8941.https://doi.org/10.1039/c3ta11633f

    Article  CAS  Google Scholar 

  17. Lamouchi, A., Assaker, I.B., and Chtourou, R., Effect of annealing temperature on the structural, optical, and electrical properties of MoS2 electrodeposited onto stainless steel mesh, J. Mater. Sci., 2017, vol. 52, no. 8, pp. 4635–4646.https://doi.org/10.1007/s10853-016-0707-9

    Article  CAS  Google Scholar 

  18. Anand, T.S., Synthesis and characterization of MoS2 films for photoelectrochemical cells, Sains Malays., 2009, vol. 38, no. 1, pp. 85–89.

    CAS  Google Scholar 

  19. Lee, S.K., Chu, D., Song, D.Y., Pak, S.W., and Kim, E.K., Electrical and photovoltaic properties of residue-free MoS2 thin films by liquid exfoliation method, Nanotechnology, 2017, vol. 28, no. 19, paper 195703.https://doi.org/10.1088/1361-6528/aa6740

  20. Garkusha, Zh.M., Osnovy fiziki poluprovodnikov (Fundamentals of Semiconductor Physics), Moscow: Vysshaya Shkola, 1982.

  21. Li, H., Zhang, Q., Ray, YapC.C., Tay, B.K., Edwin, T.H.T., Olivier, A., and Baillargeat, D., From bulk to monolayer MoS2: evolution of Raman scattering, Adv. Funct. Mater., 2012, vol. 22, pp. 1385–1390.https://doi.org/10.1002/adfm.201102111

    Article  CAS  Google Scholar 

Download references

Funding

This work was supported by the National Academy of Sciences of Azerbaijan as part of research programs in priority directions, 2019–2020.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to V. A. Majidzade.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Majidzade, V.A., Jafarova, S.F., Kasimogli, I. et al. Electrical and Photoelectrochemical Properties of Thin MoS2 Films Produced by Electrodeposition. Inorg Mater 57, 331–336 (2021). https://doi.org/10.1134/S0020168521040105

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168521040105

Keywords:

Navigation